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Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.
A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation
Application of T33-stress to predict the lower bound fracture toughness for increasing the test specimen thickness in the transition temperature region
Irreversibility of catalytic reduction of dioxygen by dissolved hemin
Three-dimensional T-stresses for three-point-bend specimens with large thickness variation